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| RB721Q-40 diodes schottky barrier diode RB721Q-40 ! ! ! ! applications high speed switching ! ! ! ! features 1) glass-sealed envelope for high reliability. (msd) 2) small pitch enables insertion on pcbs. 3) low v f and low i r . ! ! ! ! construction silicon epitaxial planar ! ! ! ! external dimensions (units : mm) 1.8 0.2 0.4 0.1 29 1 2.7 0.3 29 1 rohm : msd eiaj : ? jedec : do-34 cathode band (black) product identification number is stamped on body of main unit. s 2 ? ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit peak reverse voltage v rm 40 v dc reverse voltage v r 40 v mean rectifying current i o 30 ma peak forward surge current ? i fsm 200 ma junction temperature tj 125 c storage temperature tstg c ? 40~ + 125 ? 60 hz for 1 ! ! ! ! electrical characteristics (ta=25 c) note) esd sensitive product handling required. parameter symbol min. typ. max. unit conditions forward voltage v f ?? 0.37 v i f =1ma reverse current i r ?? 0.5 av r =25v capacitance between terminals ? 2.0 ? pf v r =1v, f=1mhz c t
RB721Q-40 diodes ! ! ! ! electrical characteristic curves (ta=25 c) pulse measurement 0 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ta=25 c 10 100 1m 10m 100m ta=0 c ta= ? 40 c typ. ta=75 c ta=50 c forward current : i f (a) forward voltage : v f (v) fig.1 forward characteristics 0 ta=75 c 1n 10n 100n 1 10 100 ta=100 c ta=50 c ta=25 c pulse measurement typ. 5 101520253035 reverse current : i r (a) reverse voltage : v r (v) fig.2 reverse characteristics 0 5 10 15 20 25 0.1 1 10 100 reverse voltage : v r (v) capacitance between terminals : c t (pf) fig.3 capacitance between terminals characteristics 0 0.1 0.2 0.5 1 2 5 10 10 i r =10ma i rr =1ma 20 30 reverse recovery time : t rr (ns) forward current : i f (ma) fig.4 reverse recovery time characteristics 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( c) fig.5 derating curve (mounting on glass epoxy pcbs) |
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